BD944 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon PNP Power Transistor

INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
BD944/946/948
DESCRIPTION
·DC Current Gain-
: h_FE= 85(Min)@ I_C= -500mA
·Complement to Type BD943/945/947
APPLICATIONS
·Designed for use in audio output stages and general
purpose amplifier applications.
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE
BD944
-22
V_CBO
Collector-Base Voltage BD946
-32
BD948
-45
BD944
-22
V_CEO
Collector-Emitter Voltage BD946
-32
BD948
-45
V_EBO
Emitter-Base Voltage
-5
I_C
Collector Current-Continuous
-5
I_CM
Collector Current-Peak
-8
I_BB
Base Current-Continuous
-1
P_C
Collector Power Dissipation
@ T_C=25℃
40
T_J
Junction Temperature
150
T_stg
Storage Temperature Range
-65~150
UNIT
V
V
V
A
A
A
W
℃
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
R_{th j-c}
R_{th j-a}
Thermal Resistance,Junction to Case
3.12 ℃/W
Thermal Resistance,Junction to Ambient 70 ℃/W
isc Website：www.iscsemi.cn