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BD934F Datasheet, PDF (2/2 Pages) Inchange Semiconductor Company Limited – isc Silicon PNP Power Transistor
INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
BD934F/936F/938F/940F/942F
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BD934F
VCEO(SUS)
Collector-Emitter
Sustaining Voltage
BD936F
BD938F IC= 100mA ; IB= 0
BD940F
BD942F
VCE(sat) Collector-Emitter Saturation Voltage IC= -1A; IB=B -0.1A
VBE(on) Base-Emitter On Voltage
ICBO
Collector Cutoff Current
ICEO
Collector Cutoff Current
IC= -1A; VCE= -2V
VCB= VCBOmax; IE= 0
VCB= VCBOmax; IE= 0,TJ=150℃
VCE= VCEOmax; IB= 0
IEBO
Emitter Cutoff Current
VEB= -5V; IC= 0
hFE-1
DC Current Gain
IC= -150mA ; VCE= -2V
hFE-2
DC Current Gain
IC= -1A ; VCE= -2V
fT
Current-Gain—Bandwidth Product IC= -250mA ; VCE= -10V
Switching Times
ton
Turn-On Time
toff
Turn-Off Time
IC= -1.0A; IB1= -IB2= -0.1A
MIN TYP. MAX UNIT
45
60
80
V
100
120
-0.6 V
-1.3 V
-0.1
-3.0
mA
-0.5 mA
-1.0 mA
40
250
25
3
MHz
0.2 0.6 μs
0.7 2.4 μs
isc Website:www.iscsemi.cn
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