BD934F Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon PNP Power Transistor

INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
BD934F/936F/938F/940F/942F
DESCRIPTION
·DC Current Gain-
: h_FE= 40(Min)@ I_C= -150mA
·Complement to Type BD933F/935F/937F/939F/941F
APPLICATIONS
·Designed for use in output stages of audio and television
amplifier circuits where high peak powers can occur.
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
BD934F
-45
BD936F
-60
V_CBO
Collector-Base Voltage BD938F
-100
V
BD940F
-120
BD942F
-140
BD934F
-45
BD936F
-60
V_CEO
Collector-Emitter Voltage BD938F
-80
V
BD940F
-100
BD942F
-120
V_EBO
Emitter-Base Voltage
-5
V
I_C
Collector Current-Continuous
-3
A
I_CM
Collector Current-Peak
-7
A
I_BB
Base Current-Continuous
P_C
Collector Power Dissipation
@ T_C=25℃
T_J
Junction Temperature
T_stg
Storage Temperature Range
-0.5
A
19
W
150
℃
-65~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
R_{th j-c}
R_{th j-a}
Thermal Resistance,Junction to Case
4.17 ℃/W
Thermal Resistance,Junction to Ambient 55 ℃/W
isc Website：www.iscsemi.cn