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| BD909 Datasheet, PDF (2/4 Pages) STMicroelectronics – COMPLEMENTARY SILICON POWER TRANSISTORS | |||
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Inchange Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS)
Collector-emitter
sustaining voltage
BD909
BD911
IC=0.1A; IB=0
VCEsat-1 Collector-emitter saturation voltage IC=5 A;IB=0.5 A
VCEsat-2 Collector-emitter saturation voltage IC=10A;IB=2.5 A
VBEsat Base-emitter saturation voltage
IC=10A;IB=2.5 A
VBE
Base-emitter voltage
IC=5A ; VCE=4V
ICBO
Collector cut-off current
BD909
BD911
VCB=80V; IE=0
TC=150
VCB=100V; IE=0
TC=150
BD909 VCE=40V; IB=0
ICEO
Collector cut-off current
BD911 VCE=50V; IB=0
IEBO
Emitter cut-off current
VEB=5V; IC=0
hFE-1
DC current gain
IC=0.5A ; VCE=4V
hFE-2
DC current gain
IC=5A ; VCE=4V
hFE-3
DC current gain
IC=10A ; VCE=4V
fT
Transition frequency
IC=0.5A ; VCE=4V
Product Specification
BD909 BD911
MIN TYP. MAX UNIT
80
V
100
1.0
V
3.0
V
2.5
V
1.5
V
0.5
5
mA
0.5
5
1
mA
1
mA
40
250
15
150
5
3
MHz
2
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