BD909 Datasheet, PDF (1/4 Pages) STMicroelectronics – COMPLEMENTARY SILICON POWER TRANSISTORS

Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
BD909 BD911
DESCRIPTION
With TO-220C package
Complement to type BD910 BD912
APPLICATIONS
Intented for use in power linear
and switching applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Absolute maximum ratings (Ta=25 )
SYMBOL
PARAMETER
V_CBO
Collector-base voltage
BD909
BD911
V_CEO
Collector-emitter voltage
BD909
BD911
V_EBO
Emitter-base voltage
I_C
Collector current
I_B
Base current
P_C
Collector power dissipation
T_j
Junction temperature
T_stg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
T_C25
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-c}
Thermal resistance junction to case
VALUE
80
100
80
100
5
15
5
90
150
-65~150
UNIT
V
V
V
A
A
W
MAX
1.4
UNIT
/W