BD202 Datasheet, PDF (2/2 Pages) List of Unclassifed Manufacturers – PNP PLASTIC POWER TRANSISTORS

INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
BD202/204
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO
Collector-Emitter
Breakdown Voltage
BD202
BD204
IC= -50mA ;IB= 0
V(BR)CBO Collector-Base Breakdown Voltage IC= -1mA ;IE= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= -1mA ;IC= 0
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -3A; IB= -0.3A
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -6A; IB= -0.6A
VBE(sat) Base-Emitter Saturation Voltage
IC= -6A; IB= -0.6A
VBE(on) Base-Emitter On Voltage
IC= -3A ; VCE= -2V
ICEO
Collector Cutoff Current
VCE= -30V; IB= 0
ICBO
Collector Cutoff Current
VCB= -40V;IE= 0; TJ= 150℃
IEBO
Emitter Cutoff Current
VEB= -5V; IC=0
hFE
DC Current Gain
BD202
BD204
IC= -3A ; VCE= -2V
IC= -2A ; VCE= -2V
fT
Current-Gain—Bandwidth Product I_C= -0.3A ; V_CE= -3V, f_test= 1.0MHz
Switching Times
ton
Turn-On Time
toff
Turn-Off Time
IC= -2A; IB1= -IB2= -0.2A
MIN MAX UNIT
-45
V
-60
-60
V
-5
V
-1.0
V
-1.5
V
-2.0
V
-1.5
V
-0.2 mA
-1.0 mA
-0.5 mA
30
7.0
MHz
1
μs
2
μs
isc website：www.iscsemi.com
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