BD202 Datasheet, PDF (1/2 Pages) List of Unclassifed Manufacturers – PNP PLASTIC POWER TRANSISTORS

INCHANGE Semiconductor
isc Silicon PNP Power Transistor
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO = -45V(Min)- BD202
-60V(Min)- BD204
·Complement to Type BD201/203
APPLICATIONS
·Designed for use in hi-fi equipment delivering an output
of 15 to 15 W into a 4Ωor 8Ωload.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
BD202
-60
VCBO
Collector-Base Voltage
V
BD204
-60
BD202
-45
VCEO
Collector-Emitter Voltage
V
BD204
-60
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-8
A
ICM
Collector Current-Peak tp≤10ms
-12
A
ICSM
Collector Current-Peak tp≤2ms
-25
A
IB
Base Current
PC
Collector Power Dissipation
@ TC=25℃
TJ
Junction Temperature
-3
A
60
W
150
℃
Tstg
Storage Temperature Range
-65~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance, Junction to Case
2.08 ℃/W
Rth j-a Thermal Resistance, Junction to Ambient 70 ℃/W
isc Product Specification
BD202/204
isc website：www.iscsemi.com
1 _{isc & iscsemi is registered trademark}