APT13005SU-G1 Datasheet, PDF (2/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor

isc Silicon NPN Power Transistor
isc Product Specification
APT13005SU-G1
ELECTRICAL CHARACTERISTICS
TC =25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 1mA; IB= 0
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 1 A ;IB= 0.2A
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 2 A ;IB= 0.5A
VCE(sat)-3 Collector-Emitter Saturation Voltage IC= 3A ;IB= 0.75A
VBE(sat)-1 Base-Emitter Saturation Voltage
IC= 1 A ;IB= 0.2A
VBE(sat)-2 Base-Emitter Saturation Voltage
IC= 2A ;IB= 0.5A
IEBO
Emitter Cutoff Current
VEB= 9V; IC= 0
ICEO
Collector Cutoff Curren
VCE= 450V; IB= 0
ICBO
Collector Cutoff Curren
VCB= 700V; IE= 0
hFE-1
DC Current Gain
IC= 1A; VCE= 5V
hFE-2
DC Current Gain
IC= 2A; VCE= 5V
fT
Current-Gain—Bandwidth Product IC= 0.5A; VCE= 10V;
COB
Output Capacitance
VCB= 10V,ftest= 0.1MHz
MIN TYP. MAX UNIT
450
V
0.3
V
0.6
V
1.0
V
1.2
V
1.4
V
10 uA
0.1 mA
10 uA
15
35
8
35
4
MHz
35
pF
Switching times
ton
Turn-on Time
tstg
Storage Time
tf
Fall Time
IC= 2A , IB1= -IB2= 0.4A
0.7 μs
4.5 μs
0.8 μs
isc website：www.iscsemi.cn
2 _{isc & iscsemi is registered trademark}