APT13005SU-G1 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor

isc Silicon NPN Power Transistor
isc Product Specification
APT13005SU-G1
DESCRIPTION
· High Collector-Emitter Voltage
: VCES= 700V(Min.)
·Fast Switching Speed
·Collector Saturation Voltage
: VCE(sat) = 0.3V(Max) @ IC= 1.0A
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Battery charges for Mobile Phone of BCD Solution
·Power supply for DVD/STB of BCD Solution
·Driver for LED Lighting of BCD Solution
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCES
Collector-Emitter Voltage
700
V
VCEO
Collector-Emitter Voltage
450
V
VEBO
Emitter-Base Voltage
9
V
IC
Collector Current-Continuous
3.2
A
ICM
Collector Current-Peak
6.4
A
IB
Base Current
PC
Collector Power Dissipation
Tc=25℃
Ti
Junction Temperature
Tstg
Storage Temperature Range
1.6
A
20
W
150
℃
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX UNIT
6.25 ℃/W
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