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| 60NF06 Datasheet, PDF (2/2 Pages) Inchange Semiconductor Company Limited – isc N-Channel MOSFET Transistor | |||
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INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
60NF06
ELECTRICAL CHARACTERISTICS
TC=25â unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage
VGS= 0; ID= 0.25mA
VGS(th) Gate Threshold Voltage
RDS(on) Drain-Source On-Resistance
IGSS
Gate-Body Leakage Current
IDSS
Zero Gate Voltage Drain Current
VSD
Forward On-Voltage
VDS= VGS; ID= 0.25mA
VGS= 10V; ID= 30A
VGS= ±20V;VDS= 0
VDS= 60V; VGS=0
VDS= 60V; VGS=0; Tj= 125â
IS= 60A; VGS=0
MIN MAX UNIT
60
V
2
4
V
0.016
Ω
±100
nA
1
10
μA
1.3
V
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