60NF06 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc N-Channel MOSFET Transistor

INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
60NF06
FEATURES
·Drain Current –I_D=60A@ T_C=25℃
·Drain Source Voltage-
: V_DSS= 60V(Min)
·Static Drain-Source On-Resistance
: R_DS(on) = 0.016Ω(Max)
·Fast Switching
DESCRIPTION
Suitable as primary switch in advanced high-efficiency isolated
DC-DC converters for Telecom and Computer application. It is
also intended for any application with low gate charge drive
requirements .
APPLICATIONS
·High-efficiency DC-DC converters
·UPS and motor control
·Automotive
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE UNIT
V_DSS
V_GS
Drain-Source Voltage
Gate-Source Voltage-Continuous
60
V
±20
V
I_D
Drain Current-Continuous
60
A
I_DM
Drain Current-Single Pluse (t_p≤10μs)
240
A
P_D
Total Dissipation @T_C=25℃
110
W
T_J
Max. Operating Junction Temperature
175
℃
T_stg
Storage Temperature
-65~175 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-c}
R_{th j-a}
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
MAX
1.36
62.5
UNIT
℃/W
℃/W
isc Website：www.iscsemi.cn