5NA80 Datasheet, PDF (2/2 Pages) Inchange Semiconductor Company Limited – isc N-Channel MOSFET Transistor

isc N-Channel MOSFET Transistor
·ELECTRICAL CHARACTERISTICS (TC=25℃)
INCHANGE Semiconductor
5NA80
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage
VGS= 0; ID= 0.25mA
VGS(th) Gate Threshold Voltage
VDS= 10V; ID=0.25mA
RDS(on) Drain-Source On-Resistance
IGSS
Gate-Body Leakage Current
VGS= 10V; ID= 2.5A
VGS= ±30V;VDS= 0
IDSS
Zero Gate Voltage Drain Current
VDS= 800V; VGS= 0
Ciss
Input Capacitance
Crss
Reverse Transfer Capacitance
Coss
Output Capacitance
VDS=25V;
VGS=0V;
fT=1MHz
MIN TYPE MAX UNIT
800
V
2.25
3.75
V
2.4
Ω
±100 nA
25
uA
1700
190
pF
50
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