5NA80 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc N-Channel MOSFET Transistor

isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
5NA80
DESCRIPTION
·Drain Current ID= 4.7A@ TC=25℃
·Drain Source Voltage
: VDSS= 800V(Min)
·Fast Switching Speed
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·High current ,high speed switching
·Switch mode power supplies
·DC-AC converters for welding equipment and uninterruptible
power supplies and motor drive
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VDSS
Drain-Source Voltage (VGS=0)
800
V
VGS
Gate-Source Voltage
±30
V
ID
Drain Current-continuous@ TC=25℃
4.7
A
Ptot
Total Dissipation@TC=25℃
125
W
Tj
Max. Operating Junction Temperature
150
℃
Tstg
Storage Temperature Range
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
-65~150 ℃
MAX UNIT
Rth j-a Thermal Resistance,Junction to Ambient 62.5 ℃/W
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