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| 3DD523 Datasheet, PDF (2/3 Pages) Inchange Semiconductor Company Limited – Silicon NPN Power Transistor | |||
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Inchange Semiconductor
Silicon NPN Power Transistor
CHARACTERISTICS
Tj=25â unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=0.2A ;IB=0
VCER
Collector-emitter sustaining voltage IC=0.2A ;RBE=100Ω
VCEsat-1 Collector-emitter saturation voltage IC=4A ;IB=0.4A
VCEsat-2 Collector-emitter saturation voltage IC=10A ;IB=3.3A
VBE
Base-emitter on voltage
IC=4A ; VCE=4V
ICEO
Collector cut-off current
ICEX
Collector cut-off current
IEBO
Emitter cut-off current
VCE=30V; IB=0
VCE=100V; VBE(off)=1.5V
TC=150â
VEB=7V; IC=0
hFE-1
DC current gain
IC=5A ; VCE=5V
hFE-2
Is/b
fT
DC current gain
IC=10A ; VCE=4V
Second breakdown collector current VCE=40Vdc,t=1.0s,
With base forward biased
Nonrepetitive
Transition frequency
IC=0.5A ; VCE=10V
Product Specification
3DD523
MIN TYP. MAX UNIT
60
V
70
V
1.1
V
3.0
V
1.5
V
0.7
mA
1.0
5.0
mA
5.0
mA
55
80
5.0
2.87
A
2.5
MHz
2
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