3DD523 Datasheet, PDF (1/3 Pages) Inchange Semiconductor Company Limited – Silicon NPN Power Transistor

Inchange Semiconductor
Silicon NPN Power Transistor
Product Specification
3DD523
DESCRIPTION
·With TO-3 package
·DC Current Gain -h_FE = 20–70 @ I_C = 4 Adc
·Collector–Emitter Saturation Voltage -
V_CE(sat) = 1.1 Vdc (Max) @ I_C = 4 Adc
·Excellent Safe Operating Area
APPLICATIONS
·Designed for general–purpose switching
and amplifier applications.
PINNING
PIN
1
2
3
DESCRIPTION
Base
Emitter
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=℃)
SYMBOL
PARAMETER
V_CBO
Collector-base voltage
V_CEO
Collector-emitter voltage
V_EBO
Emitter-base voltage
I_C
Collector current
P_C
Collector power dissipation
T_j
Junction temperature
T_stg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
T_C=25℃
VALUE
150
150
7
10
100
150
-65~200
UNIT
V
V
V
A
W
℃
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-c}
Thermal resistance junction to case
VALUE
1.52
UNIT
℃/W