3DD5024 Datasheet, PDF (2/2 Pages) JILIN SINO-MICROELECTRONICS CO., LTD. – CASE-RATED BIPOLAR TRANSISTOR 3DD5308DHF FOR LOW FREQUENCY AMPLIFICATION

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
3DD5024
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CBO Collector- Base Breakdown Voltage
IC= 1mA ; IE= 0
1500
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 400mA; IC= 0
6
VCE(sat) Collector-Emitter Saturation Voltage IC= 4.5A; IB= 0.9A
VBE(sat) Base-Emitter Saturation Voltage
IC= 4.5A; IB= 0.9A
IEBO
Emitter Cutoff Current
VEB= 4V; IC= 0
40
ICBO
Collector Cutoff Current
VCB= 1500V; IE= 0
hFE
DC Current Gain
IC= 1A; VCE= 5V
10
IC= 5A; VCE= 5V
5
VECF
C-E Diode Forward Voltage
IF= 5A
fT
Current-Gain—Bandwidth Product
IC= 0.1A; VCE= 10V; f= 0.5MHz
1.7
Switching times; Resistive load
tstg
Storage Time
tf
Fall Time
IC= 4A, IB1= IB2= -1.8A
V
V
3.0
V
1.5
V
150 mA
1
mA
30
2.0
V
MHz
1.0 μs
9.0 μs
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