3DD5024 Datasheet, PDF (1/2 Pages) JILIN SINO-MICROELECTRONICS CO., LTD. – CASE-RATED BIPOLAR TRANSISTOR 3DD5308DHF FOR LOW FREQUENCY AMPLIFICATION

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
DESCRIPTION
·High Breakdown Voltage-
: VCBO= 1500V (Min)
·Wide Area of Safe Operation
·Built-in Damper Diode
APPLICATIONS
·Horizontal deflection output for TV, CRT monitor
applicaitions.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
1500
V
VCEO
Collector-Emitter Voltage
600
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current- Continuous
8
A
IB
Base Current- Continuous
4
A
ICP
Collector Current-Pulse
PC
Collector Power Dissipation
@ TC=25℃
TJ
Junction Temperature
16
A
35
W
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
isc Product Specification
3DD5024
isc website：www.iscsemi.com
1 isc & iscsemi is registered trademark