3DD4515 Datasheet, PDF (2/2 Pages) JILIN SINO-MICROELECTRONICS CO., LTD. – HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
3DD4515
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 1mA; IC= 0
9
V(BR)CEO Collector-Emitter Breakdown Voltage IC=10mA; IB= 0
400
V(BR)CBO Collector-Base Breakdown Voltage
IC= 1mA; IE= 0
700
hFE1
DC Current Gain
IC= 2A; VCE= 5V
15
hFE2
DC Current Gain
IC= 5A; VCE= 5V
10
hFE3
DC Current Gain
IC= 10A; VCE= 5V
8
VCE_(sat) Collector-Emitter Saturation Voltage IC= 10A; IB= 2A
VBE_(sat) Base -Emitter Saturation Voltage
IC= 10A; IB= 2A
tf
Fall Time
VCC=24V,IC=6A,IB1=-I B2=1.2A
t_stg
Storage Time
VCC=24V,IC=6A,IB1=-I B2=1.2A
fT
Current-Gain—Bandwidth Product
IE= -0.5A ; VCE= 10V
4
V
V
V
50
1.0 V
1.5 V
0.7 μs
3
us
MHz
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