3DD4515 Datasheet, PDF (1/2 Pages) JILIN SINO-MICROELECTRONICS CO., LTD. – HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
3DD4515
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V_(BR)CEO= 400V(Min)
·Collector-Emitter Saturation Voltage-
: V_CE(sat)= 1.0V(Max) @I_C=10A
APPLICATIONS
·Designed for power amplifier,high speed switching and
regulated power supply applications.
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
700
V
VCEO Collector-Emitter Voltage
400
V
VEBO Emitter-Base Voltage
9
V
IC
Collector Current-Continuous
Collector Power Dissipation
PC
@ TC=75℃
TJ
Junction Temperature
15
A
120
W
150
℃
T_stg
Storage Temperature Range
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-c} ^{Thermal Resistance,Junction to Case}
MAX UNIT
1.04 ℃/W
isc website：www.iscsemi.cn
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