3DD325 Datasheet, PDF (2/2 Pages) Inchange Semiconductor Company Limited – Collector-Emitter Breakdown Voltage-: V(BR)CEO= 50V(Min)

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
3DD325
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
3DD325A 30
V(BR)CEO Collector-Emitter Breakdown Voltage I_C= 1mA; I_B= 0
V
3DD325B 50
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 0.5mA; IC= 0
4
V
VCE_(sat) Collector-Emitter Saturation Voltage IC= 0.5A; IB= 50mA
0.5 V
ICBO
Collector Cutoff Current
VCB= 50V; IE= 0
10 μA
ICEO
Collector Cutoff Current
VCE= 15V; IB= 0
0.1 mA
IEBO
Emitter Cutoff Current
VEB= 4V; IC= 0
0.1 mA
hFE
DC Current Gain
IC= 0.5A; VCE= 3V
50
200
 h_FE Classifications
Green
Blue
Purple
Grey
50-70 70-100 100-140 140-200
isc website：www.iscsemi.cn
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