3DD325 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – Collector-Emitter Breakdown Voltage-: V(BR)CEO= 50V(Min)

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
3DD325
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V_(BR)CEO= 50V(Min)
·Low Collector-Emitter Saturation Voltage-
: V_CE(sat)= 0.5V(Max) @I_C= 0.5A
APPLICATIONS
·Designed for B/W TV vertical output applications.
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO Collector-Base Voltage
50
V
3DD325A
30
VCEO Collector-Emitter Voltage
V
3DD325B
50
VEBO Emitter-Base Voltage
4
V
IC
Collector Current-Continuous
Collector Power Dissipation
@ T_a=25℃
PC
Collector Power Dissipation
@ TC=25℃
TJ
Junction Temperature
1.5
A
1.8
W
25
150
℃
T_stg
Storage Temperature Range
-55~150 ℃
isc website：www.iscsemi.cn
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