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| 3DD303B Datasheet, PDF (2/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor | |||
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
3DD303B
ELECTRICAL CHARACTERISTICS
TC=25â unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA; IB=B 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 1mA; IC= 0
V(BR)CBO Collector-Base Breakdown Voltage
IC= 1mA; IE= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 0.5A; IB= 50mA
VBE(sat) Base-Emitter Saturation Voltage
IC= 3A; IB=B 0.3A
ICBO
Collector Cutoff Current
VCB= 50V; IE= 0
ICEO
Collector Cutoff Current
VCE= 50V; IB=B 0
hFE
DC Current Gain
IC= 0.5A; VCE= 5V
MIN TYP. MAX UNIT
60
V
6
V
100
V
0.6
V
1.5
V
0.5 mA
0.5 mA
50
200
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