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3DD303B Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor | |||
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
3DD303B
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 60V(Min)
·Collector-Emitter Saturation Voltage-
: VCE(sat)= 0.6V(Max) @IC= 0.5A
APPLICATIONS
·Designed for B/W TV vertical output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
100
V
VCEO
Collector-Emitter Voltage
60
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
Collector Power Dissipation
PC
@ TC=75â
TJ
Junction Temperature
Tstg
Storage Temperature Range
3
A
30
W
150
â
-55~150
â
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX UNIT
2.5 â/W
isc Websiteï¼www.iscsemi.cn
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