3DD208 Datasheet, PDF (2/2 Pages) Inchange Semiconductor Company Limited – Collector-Emitter Breakdown Voltage-: V(BR)CEO= 200V(Min.)

INCHANGE Semiconductor
isc Silicon NPN Power Transistors
isc Product Specification
3DD208
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 5mA; IB= 0
V(BR)CBO Collector-Base Breakdown Voltage
IC= 5mA; IE= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 1mA; IC= 0
VCE_(sat) Collector-Emitter Saturation Voltage IC= 1A; IB= 0.1A
ICEO
Collector Cutoff Current
VCE= 50V; IB= 0
IEBO
Emitter Cutoff Current
VEB= 6V; IC= 0
hFE
DC Current Gain
IC= 0.5A; VCE= 10V
MIN MAX UNIT
200
V
300
V
6
V
2.0
V
0.1 mA
0.1 mA
30 250
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