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| 3DD208 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – Collector-Emitter Breakdown Voltage-: V(BR)CEO= 200V(Min.) | |||
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
3DD208
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 200V(Min.)
·DC Current Gain-
: hFE= 30~250(Min.)@IC= 0.5A
·Collector-Emitter Saturation Voltage-
: VCE(sat)= 2.0V(Max)@ IC= 1A
APPLICATIONS
·Designed for switching regulator and power amplifier
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VALUE UNIT
VCBO Collector-Base Voltage
300
V
VCEO Collector-Emitter Voltage
200
V
VEBO Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
3
A
PC
Collector Power Dissipation@TC=25â
50
W
TJ
Junction Temperature
150
â
Tstg
Storage Temperature
-55~150 â
isc websiteï¼www.iscsemi.cn
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