3DD13009K Datasheet, PDF (2/2 Pages) JILIN SINO-MICROELECTRONICS CO., LTD. – HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SD1619
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA; IB= 0
V(BR)CBO Collector-Base Breakdown Voltage
V(BR)EBO Emitter-Base Breakdown Voltage
IC=-10uA ,IE=0
IE= 10uA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 500mA; IB= 50mA
VBE(sat) Base-Emitter Saturation Voltage
IC= 500mA; IB= 50mA
ICBO
IEBO
hFE-1
hFE-2
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
DC Current Gain
VCB= 20V; IE= 0
VEB= 4V; IC= 0
IC= 50mA; VCE= 2V
IC= 1A; VCE= 2V
fT
Current-Gain—Bandwidth Product
IC= 50mA; VCE= 10V
COB
Output Capacitance
IE= 0; VCB= 10V; f= 1.0MHz
MIN TYP. MAX UNIT
25
V
25
V
5
V
0.3
V
1.2
V
0.1 μA
0.1 μA
100
560
40
180
MHz
15
pF
 hFE -1Classifications
R
S
T
U
100-200 140-280 200-400 280-560
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