3DD13009K Datasheet, PDF (1/2 Pages) JILIN SINO-MICROELECTRONICS CO., LTD. – HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SD1619
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 25V (Min)
·Complement to Type 2SB1119
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for LF Amp Electronic Governor applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
25
V
VCEO
Collector-Emitter Voltage
25
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
1
A
ICM
Collector Current-Peak
PC
Collector Power Dissipation
@ Tc=25℃
TJ
Junction Temperature
2
A
0.5
W
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
isc website：www.iscsemi.com
1 _{isc & iscsemi is registered trademark}