3DD101A Datasheet, PDF (2/2 Pages) Inchange Semiconductor Company Limited – Collector-Emitter Breakdown Voltage-: V(BR)CEO= 100V(Min.)

INCHANGE Semiconductor
isc Silicon NPN Power Transistors
isc Product Specification
3DD101A
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 5mA; IB= 0
V(BR)CBO Collector-Base Breakdown Voltage
IC= 5mA; IE= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 5mA; IC= 0
VCE_(sat) Collector-Emitter Saturation Voltage IC= 2.5A; IB= 0.25A
ICEO
Collector Cutoff Current
VCE= 50V; IB=0
ICBO
Collector Cutoff Current
VCB= 50V; IE=0
hFE
DC Current Gain
IC= 2A; VCE= 5V
fT
Current Gain-Bandwidth Product
IC= 0.5A; VCE= 12V
MIN MAX UNIT
100
V
150
V
4
V
0.8
V
2.0 mA
1.0 mA
20
1
MHz
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