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| 3DD101A Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – Collector-Emitter Breakdown Voltage-: V(BR)CEO= 100V(Min.) | |||
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
3DD101A
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 100V(Min.)
·DC Current Gain-
: hFE= 20(Min.)@IC= 2A
·Collector-Emitter Saturation Voltage-
: VCE(sat)= 0.8V(Max)@ IC= 2.5A
APPLICATIONS
·Designed for power amplifier,DC-DC converter and regulated
power supply applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VALUE UNIT
VCBO Collector-Base Voltage
150
V
VCEO Collector-Emitter Voltage
100
V
VEBO Emitter-Base Voltage
4
V
IC
Collector Current-Continuous
5
A
PC
Collector Power Dissipation@TC=75â
50
W
TJ
Junction Temperature
175
â
Tstg
Storage Temperature
-55~175 â
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX UNIT
2.0 â/W
isc websiteï¼www.iscsemi.cn
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