3AD53 Datasheet, PDF (2/2 Pages) Inchange Semiconductor Company Limited – isc Silicon PNP Power Transistors

INCHANGE Semiconductor
isc Silicon PNP Power Transistors
isc Product Specification
3AD53
ELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -50mA ; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= -4A; IB= -0.4A
VBE(on) Base-Emitter On Voltage
IC= -4A ; VCE= -4V
ICEO
Collector Cutoff Current
VCE= -10V; IB= 0
ICBO
Collector Cutoff Current
VCB= -20V; IE= 0
hFE
DC Current Gain
IC= -4A ; VCE= -2V
fT
Current Gain-Bandwidth Product
IC= -0.5A ; VCE= -10V;ftest= 1.0MHz
MIN MAX UNIT
-24
V
-1.0
V
-1.5
V
-10 mA
-0.5 mA
20 140
10
MHz
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