3AD53 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon PNP Power Transistors

INCHANGE Semiconductor
isc Silicon PNP Power Transistors
DESCRIPTION
·DC Current Gain-
: hFE=20-140@IC= -4A
·Collector-Emitter Saturation Voltage-
: VCE(sat)= -1.0V(Max)@ IC= -4A
·
APPLICATIONS
·Designed for general-purpose switching and amplifier
applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-70
V
VCEO
Collector-Emitter Voltage
-24
V
VEBO
Emitter-Base Voltage
-20
V
IC
Collector Current-Continuous
PC
Collector Power Dissipation
@TC=55℃
TJ
Junction Temperature
-6
A
20
W
150
℃
Tstg
Storage Temperature
-55-150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX
1.75
UNIT
℃/W
isc Product Specification
3AD53
isc website：www.iscsemi.com
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