 English |
|
|
|
|
|
|
|
| 2SK1809 Datasheet, PDF (2/2 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET | |||
| |||
| ◁ |
INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
·ELECTRICAL CHARACTERISTICS (TC=25â)
isc Product Specification
2SK1809
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage
V(BR)GSS Gate-Source Breakdown Voltage
VGS= 0; ID= 10mA
VDS= 0; IG= 100μA
VGS(th) Gate Threshold Voltage
VDS= 10V; ID=1mA
VDF
Body to drain diode forward voltage IS= 5A, VGS = 0
RDS(on) Drain-Source On-Resistance
IGSS
Gate-Body Leakage Current
VGS= 10V; ID= 2.5A
VGS= ±25V;VDS= 0
IDSS
Zero Gate Voltage Drain Current
VDS=500V; VGS= 0
Ciss
Input capacitance
Crss
Reverse transfer capacitance
Coss
Output capacitance
VDS=10V;
VGS=0V;
fT=1MHz
tr
Rise time
ton
Turn-on time
tf
Fall time
toff
Turn-off time
VGS=10V;
ID=2.5A;
VDD=200V;
RL=12Ω
MIN TYPE MAX UNIT
600
V
±30
V
2.0
3.0
V
0.9
V
1.5
Ω
±10 μA
250
μA
1000
45
pF
250
45
12
ns
55
105
isc websiteï¼www.iscsemi.cn
2 isc & iscsemi is registered trademark
PDF pdfFactory Pro
www.fineprint.cn
|
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese