2SK1809 Datasheet, PDF (1/2 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET

INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
DESCRIPTION
·Drain Current I_D= 5A@ T_C=25℃
·Drain Source Voltage
: V_DSS= 600V(Min)
·Fast Switching Speed
·Low on-resistance
·For switchinggregulator,DC-DC Converter
isc Product Specification
2SK1809
APPLICATIONS
·High speed power switching
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE UNIT
V_DSS
Drain-Source Voltage (V_GS=0)
600
V
V_GS
Gate-Source Voltage
±30
V
I_D
Drain Current-continuous@ T_C=25℃
5
A
P_tot
Total Dissipation@T_C=25℃
60
W
T_j
Max. Operating Junction Temperature
150
℃
T_stg
Storage Temperature Range
-55~150 ℃
isc website：www.iscsemi.cn
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