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| 2SK1807 Datasheet, PDF (2/2 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET | |||
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INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
·ELECTRICAL CHARACTERISTICS (TC=25â)
isc Product Specification
2SK1807
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage
V(BR)GSS Gate-Source Breakdown Voltage
VGS= 0; ID= 10mA
VDS= 0; IG= 100μA
VGS(th) Gate Threshold Voltage
VDS= VGS; ID=1mA
VDF
Body to drain diode forward voltage IS = 4 A, VGS = 0
RDS(on) Drain-Source On-Resistance
IGSS
Gate-Body Leakage Current
VGS= 10V; ID= 2A
VGS= ±25V;VDS= 0
IDSS
Zero Gate Voltage Drain Current
VDS= 720V; VGS= 0
Ciss
Input Capacitance
Crss
Reverse Transfer Capacitance
Coss
Output Capacitance
VDS=10V;
VGS=0V;
fT=1MHz
tr
Rise Time
ton
Turn-on Time
tf
Fall Time
toff
Turn-off Time
VGS=10V;
ID=2A;
VDD=200V;
RL=15Ω
MIN TYPE MAX UNIT
900
V
±30
V
2.0
3.0
V
0.9
V
4.0
Ω
±10 μA
250
μA
740
305
pF
150
60
15
ns
80
100
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