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| 2SK1807 Datasheet, PDF (1/2 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET | |||
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INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
DESCRIPTION
·Drain Current ID= 4A@ TC=25â
·Drain Source Voltage
: VDSS= 900V(Min)
·Fast Switching Speed
isc Product Specification
2SK1807
APPLICATIONS
·High Breakdown Voltage
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VALUE UNIT
VDSS
Drain-Source Voltage (VGS=0)
900
V
VGS
Gate-Source Voltage
±30
V
ID
Drain Current-continuous@ TC=25â
4
A
Ptot
Total Dissipation@TC=25â
60
W
Tj
Max. Operating Junction Temperature
150
â
Tstg
Storage Temperature Range
-55~150 â
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