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| 2SK1602 Datasheet, PDF (2/2 Pages) Toshiba Semiconductor – HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS / DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS | |||
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INCHANGE Semiconductor
isc N-Channel Mosfet Transistor
isc Product Specification
2SK1602
·ELECTRICAL CHARACTERISTICS (TC=25â)
SYMBOL
PARAMETER
CONDITIONS
MIN TYP MAX UNIT
V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID= 10mA
800
V
VGS(th) Gate Threshold Voltage
VDS=10 VGS; ID=1mA
RDS(on) Drain-Source On-stage Resistance VGS=10V; ID=1.5A
IGSS
Gate Source Leakage Current
VGS= ±25V;VDS= 0
1.5
4.3
3.5
V
5.0
Ω
±100 nA
IDSS
Zero Gate Voltage Drain Current
VDS=640V; VGS= 0
100
uA
VSD
Diode Forward Voltage
IF=2.8A; VGS=0
2.0
V
tr
Rise time
25
50
ns
ton
Turn-on time
tf
Fall time
VGS=10V;ID=1.5A;RL=267Ω
40
60
ns
40
80
ns
toff
Turn-off time
150 300
ns
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