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| 2SK1602 Datasheet, PDF (1/2 Pages) Toshiba Semiconductor – HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS / DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS | |||
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INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
2SK1602
DESCRIPTION
·Drain Current âID= 2.8A@ TC=25â
·Drain Source Voltage-
: VDSS=800V(Min)
APPLICATIONS
·Designed for high voltage, high speed power switching
applications such as switching regulators, converters,
solenoid and relay drivers.
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL ARAMETER
VALUE UNIT
VDSS
VGS
ID
Ptot
Tj
Tstg
Drain-Source Voltage (VGS=0)
Gate-Source Voltage
800
V
±30
V
Drain Current-continuous@ TC=25â
2.8
A
Total Dissipation@TC=25â
40
W
Max. Operating Junction Temperature
150
â
Storage Temperature Range
-55~150 â
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c
Rth j-a
Thermal Resistance,Junction to Case
3.125 â/W
Thermal Resistance,Junction to Ambient 62.5 â/W
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