2SK1529 Datasheet, PDF (2/2 Pages) Toshiba Semiconductor – N CHANNEL MOS TYPE (HIGH POWER AMPLIFIER APPLICATIONS)

isc N-Channel Mosfet Transistor
INCHANGE Semiconductor
2SK1529
·ELECTRICAL CHARACTERISTICS (TC=25℃)
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID= 10mA
VGS(OFF) Gate –Source Cut-off Voltage
VDS=10V; ID= 0.1A
IGSS
Gate Source Leakage Current
VGS= ±20V; VDS= 0
IDSS
Zero Gate Voltage Drain Current
VDS= 180V; VGS= 0
VSD
Diode Forward Voltage
ID= 6A; VGS= 10V
MIN MAX UNIT
180
V
0.8
2.8
V
±500 nA
1
mA
5.0
V
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