2SK1529 Datasheet, PDF (1/2 Pages) Toshiba Semiconductor – N CHANNEL MOS TYPE (HIGH POWER AMPLIFIER APPLICATIONS)

isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
2SK1529
DESCRIPTION
·Drain Current –ID= 10A@ TC=25℃
·Drain Source Voltage-
: VDSS= 180V(Min)
·Fast Switching Speed
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·High Breakdown Voltage
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL ARAMETER
VALUE UNIT
VDSS
Drain-Source Voltage (VGS=0)
180
V
VGS
Gate-Source Voltage
±20
V
ID
Drain Current-continuous@ TC=25℃
10
A
Ptot
Total Dissipation@TC=25℃
120
W
Tj
Max. Operating Junction Temperature
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
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