 English |
|
|
|
|
|
|
|
| 2SK1507 Datasheet, PDF (2/2 Pages) Fuji Electric – N-Channel Silicon Power Mos-fet(F-II Series) | |||
| |||
| ◁ |
INCHANGE Semiconductor
isc N-Channel Mosfet Transistor
isc Product Specification
2SK1507
·ELECTRICAL CHARACTERISTICS (TC=25â)
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID= 1mA
VGS(th) Gate Threshold Voltage
VDS=0; ID=1mA
RDS(on) Drain-Source On-stage Resistance VGS=10V; ID=5A
IGSS
Gate Source Leakage Current
VGS= ±30V;VDS= 0
IDSS
Zero Gate Voltage Drain Current
VDS=600V; VGS= 0
VSD
Diode Forward Voltage
IF=9A; VGS=0
tr
Rise time
ton
Turn-on time
tf
Fall time
VGS=10V;ID=9A;RL=25Ω
toff
Turn-off time
MIN TYP MAX UNIT
600
V
2.5
3.5
5.0
V
0.85 1.0
Ω
±100 nA
500
uA
1.1
1.5
V
30
45
ns
80
120
ns
80
120
ns
160 240
ns
isc websiteï¼www.iscsemi.cn
2 isc & iscsemi is registered trademark
PDF pdfFactory Pro
www.fineprint.cn
|
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese