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2SK1507 Datasheet, PDF (1/2 Pages) Fuji Electric – N-Channel Silicon Power Mos-fet(F-II Series)
INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
2SK1507
DESCRIPTION
·Drain Current –ID=9A@ TC=25℃
·Drain Source Voltage-
: VDSS=600 (Min)
APPLICATIONS
·Designed especially for high voltage,high speed applications,
such as off-line switching power supplies , UPS,AC and DC
motor controls,relay and solenoid drivers.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL ARAMETER
VDSS
Drain-Source Voltage (VGS=0)
VGS
Gate-Source Voltage
ID
Drain Current-continuous@ TC=25℃
Ptot
Total Dissipation@TC=25℃
Tj
Max. Operating Junction Temperature
Tstg
Storage Temperature Range
VALUE
UNI
T
600
V
±30
V
9
A
50
W
150
℃
-55~150 ℃
isc website:www.iscsemi.cn
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