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| 2SK1358 Datasheet, PDF (2/2 Pages) Toshiba Semiconductor – FET, Silicon N Channel MOS Type(for High Speed, High Current DC-DC Converter, Relay Drive and Motor Diver) | |||
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INCHANGE Semiconductor
isc N-Channel Mosfet Transistor
isc Product Specification
2SK1358
·ELECTRICAL CHARACTERISTICS (TC=25â)
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID= 10mA
VGS(th) Gate Threshold Voltage
VDS=10 VGS; ID=1mA
RDS(on) Drain-Source On-stage Resistance VGS=10V; ID=4A
IGSS
Gate Source Leakage Current
VGS= ±25V;VDS= 0
IDSS
Zero Gate Voltage Drain Current
VDS=720V; VGS= 0
VSD
Diode Forward Voltage
IF=9A; VGS=0
MIN TYP MAX UNIT
900
V
1.5
3.5
V
1.1
1.4
Ω
±100 nA
300
uA
2.0
V
tr
Rise time
25
50
ns
ton
Turn-on time
tf
Fall time
toff
Turn-off time
VGS=10V;ID=4A;RL=100Ω
40
80
ns
20
40
ns
100 200
ns
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