2SK1358 Datasheet, PDF (1/2 Pages) Toshiba Semiconductor – FET, Silicon N Channel MOS Type(for High Speed, High Current DC-DC Converter, Relay Drive and Motor Diver)

INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
2SK1358
DESCRIPTION
·Drain Current –I_D= 9A@ T_C=25℃
·Drain Source Voltage-
: V_DSS= 900V(Min)
·Fast Switching Speed
APPLICATIONS
·Designed for high voltage, high speed power switching
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL ARAMETER
VALUE
UNIT
V_DSS Drain-Source Voltage (V_GS=0)
900
V
V_GS
Gate-Source Voltage
±30
V
I_D
Drain Current-continuous@ TC=25℃
9
A
P_tot
Total Dissipation@TC=25℃
150
W
T_j
Max. Operating Junction Temperature
150
℃
T_stg
Storage Temperature Range
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
R_{th j-c}
R_{th j-a}
Thermal Resistance,Junction to Case
0.833 ℃/W
Thermal Resistance,Junction to Ambient 50 ℃/W
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