2SK1338 Datasheet, PDF (2/2 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET

isc N-Channel Mosfet Transistor
INCHANGE Semiconductor
2SK1338
·ELECTRICAL CHARACTERISTICS (TC=25℃)
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage
VGS= 0; ID= 10mA
VGS(th) Gate Threshold Voltage
VDS= VGS; ID=1mA
RDS(on) Drain-Source On-stage Resistance VGS=10V; ID=1A
IGSS
Gate Source Leakage Current
VGS= ±25V;VDS= 0
IDSS
Zero Gate Voltage Drain Current
VDS= 720V; VGS= 0
VSD
Forward On-Voltage
IS=2A; VGS=0
tr
Rise time
ton
Turn-on time
tf
Fall time
VGS=10V;ID=1A;
RL=30Ω
toff
Turn-off time
MIN TYP. MAX UNIT
900
V
2.0
3.0
V
5.0
7.0
Ω
±10 uA
250 uA
0.9
V
8
ns
18
ns
70
ns
100
ns
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