2SK1338 Datasheet, PDF (1/2 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET

isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
2SK1338
DESCRIPTION
·Drain Current –ID=2A@ TC=25℃
·Drain Source Voltage-
: VDSS= 900V(Min)
·Fast Switching Speed
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for high voltage, high speed power switching
applications such as switching regulators, converters,
solenoid and relay drivers.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL ARAMETER
VALUE UNIT
VDSS
Drain-Source Voltage (VGS=0)
900
V
VGS
Gate-Source Voltage
±30
V
ID
Drain Current-continuous@ TC=25℃
2
A
Ptot
Total Dissipation@TC=25℃
50
W
Tj
Max. Operating Junction Temperature
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case
0.83 ℃/W
Rth j-a Thermal Resistance,Junction to Ambient
30
℃/W
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