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| 2SK1200 Datasheet, PDF (2/2 Pages) Inchange Semiconductor Company Limited – Fast Switching Speed | |||
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INCHANGE Semiconductor
isc N-Channel Mosfet Transistor
isc Product Specification
2SK1200
·ELECTRICAL CHARACTERISTICS (TC=25â)
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID= 10mA
VGS(th) Gate Threshold Voltage
VDS=10 VGS; ID=1mA
RDS(on) Drain-Source On-stage Resistance VGS=10V; ID= 1.5A
IGSS
Gate Source Leakage Current
VGS= ±16V;VDS= 0
IDSS
Zero Gate Voltage Drain Current
VDS=720V; VGS= 0
VSD
Diode Forward Voltage
IF=3A; VGS=0
tr
Rise time
ton
Turn-on time
tf
Fall time
VGS=10V;ID=2A;
RL=15Ω
toff
Turn-off time
MIN TYP MAX UNIT
900
V
2.0
4.0
V
5.0
7.0
Ω
±10 uA
250
uA
0.95
V
70
ns
80
ns
60
ns
120
ns
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