2SK1200 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – Fast Switching Speed

INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
2SK1200
DESCRIPTION
·Drain Current –I_D= 3A@ T_C=25℃
·Drain Source Voltage-
: V_DSS= 900V(Min)
·Fast Switching Speed
APPLICATIONS
·Designed for high voltage, high speed power switching
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL ARAMETER
VALUE UNIT
V_DSS
V_GS
I_D
P_tot
T_j
T_stg
Drain-Source Voltage (V_GS=0)
Gate-Source Voltage
900
V
±20
V
Drain Current-continuous@ TC=25℃
3
A
Total Dissipation@TC=25℃
80
W
Max. Operating Junction Temperature
150
℃
Storage Temperature Range
-55~15
0
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
th j-c
Thermal Resistance,Junction to Case
0.83 ℃/W
th j-a
Thermal Resistance,Junction to Ambient 35 ℃/W
isc website：www.iscsemi.cn
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