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| 2SK1118 Datasheet, PDF (2/2 Pages) Toshiba Semiconductor – N Channel MOS Type(for High Speed, High Current DC-DC Converter, Relay Drive and Motor Diver) | |||
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INCHANGE Semiconductor
isc N-Channel Mosfet Transistor
isc Product Specification
2SK1118
·ELECTRICAL CHARACTERISTICS (TC=25â)
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage
VGS= 0; ID= 1mA
VGS(th) Gate Threshold Voltage
VDS= VGS; ID=1mA
RDS(on) Drain-Source On-stage Resistance VGS=10V; ID=3A
IGSS
Gate Source Leakage Current
VGS= ±25V;VDS= 0
IDSS
Zero Gate Voltage Drain Current
VDS= 600V; VGS= 0
VSD
Forward On-Voltage
IS=6A; VGS=0
tr
Rise time
ton
Turn-on time
tf
Fall time
VGS=10V;ID=3A;
RL=100Ω
toff
Turn-off time
MIN TYP. MAX UNIT
600
V
1.5
3.5
V
0.95 1.25
Ω
±100 nA
300 uA
2.0
V
25
50
ns
40
80
ns
20
40
ns
80 170 ns
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