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2SK1118 Datasheet, PDF (1/2 Pages) Toshiba Semiconductor – N Channel MOS Type(for High Speed, High Current DC-DC Converter, Relay Drive and Motor Diver) | |||
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INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
2SK1118
DESCRIPTION
·Drain Current âID=6A@ TC=25â
·Drain Source Voltage-
: VDSS= 600V(Min)
·Fast Switching Speed
APPLICATIONS
·Designed for high voltage, high speed power switching
applications such as switching regulators, converters,
solenoid and relay drivers.
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL ARAMETER
VALUE UNIT
VDSS
VGS
ID
Ptot
Tj
Tstg
Drain-Source Voltage (VGS=0)
600
V
Gate-Source Voltage
±30
V
Drain Current-continuous@ TC=25â
6
A
Total Dissipation@TC=25â
45
W
Max. Operating Junction Temperature
150
â
Storage Temperature Range
-55~150 â
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c
Rth j-a
Thermal Resistance,Junction to Case
2.77
Thermal Resistance,Junction to Ambient 62.5
â/W
â/W
isc websiteï¼www.iscsemi.cn
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