2SD2531 Datasheet, PDF (2/2 Pages) Toshiba Semiconductor – NPN TRIPLE DIFFUSED TYPE (POWER AMPLIFIER APPLICATIONS)

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SD2531
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ; IB= 0
60
V
VCE_(sat) Collector-Emitter Saturation Voltage IC= 2.5A; IB= 0.25A
1.0
V
VBE_(on) Base-Emitter On Voltage
ICBO
Collector Cutoff Current
IEBO
Emitter Cutoff Current
IC= 0.5A ; VCE= 5V
VCB= 60V ; IE= 0
VEB= 7V ; IC= 0
1.0
V
100 μA
100 μA
hFE-1
DC Current Gain
IC= 0.5A ; VCE= 5V
100
320
hFE-2
DC Current Gain
fT
Current-Gain—Bandwidth Product
IC= 3A ; VCE= 5V
IC= 0.5A ; VCE= 5V
20
3
MHz
COB
Output Capacitance
IE= 0; VCB= 10V; f_test= 1.0MHz
35
pF
isc Website：www.iscsemi.cn
2